gallium arsenide
英
美 [ˈɡæliəm ˈɑrsəˌnaɪd]
n. 砷化镓（Ga-As）（一种合成化合物，主要用作半导体材料）
双语例句
- Photo-Ionization Effects in High Gain Gallium Arsenide Photoconductive Semiconductor Switches
高增益砷化镓光导开关中的光致电离效应 - Gallium arsenide ultrared lighting transistor a purple variety of the ruby spinel.
砷化镓红外发光晶体管一种紫色的红尖晶石。 - Gallium arsenide injection laser
砷化镓注入式激光器 - They hope to extend their life further by using silicon or carbon, the atomic nuclei of which interfere less with the entangled electrons than do those of gallium arsenide.
他们希望可以通过使用硅或碳量子阱来进一步提高寿命，因为与砷化镓相比，这两种元素的原子核与缠结电子之间干扰较小。 - The elemental form is used to form alloys of metals ( especially lead), and certain semiconductors are made from crystals of gallium arsenide ( GaAs).
砷通常被用于制造金属合金（特别是铅）和半导体（从镓砷化物的结晶体制得）。 - Luxtera's design eliminates the need to use expensive group III – V compounds, such as gallium arsenide ( GaAs) and indium phosphate ( InP), in the semiconductors.
Luxtera的设计消除了使用昂贵的III-V化合物半导体材料（如砷化镓和磷化铟）的必要。 - Preparation of a high purity gallium arsenide monocrystal by doping with trace tin and its heat treatment
反掺锡高纯度砷化镓单晶的制备及热处理 - Ga al as semiconductor laser gallium arsenide injection laser
镓铝砷半导体激光器砷化镓注入式激光器 - Gallium arsenide switches ten times faster than silicon All of a sudden, I've got a clock speed ten times faster with no change in design.
砷化镓启动的速度是硅的10倍，突然，我得到了10倍快的时钟速度，但是设计没有发生任何改变。 - Study on the cell structure in semi-insulation gallium arsenide
用x射线形貌研究半绝缘砷化镓单晶胞状结构 - ⅲ-ⅴ compound semiconductors, such as Gallium arsenide ( GaAs), Indium phosphide ( InP) and their doped materials, are suitable to make high speed and high power PCSS with picosecond ( ps) time response.
利用Ⅲ-Ⅴ族化合物半导体材料砷化镓（GaAs）和磷化铟（InP）及其掺杂材料制作的光导开关具有很好的时间响应及高功率输出特性。 - Photoluminescence Study on Annealing Behavior of n-Type Gallium Arsenide Irradiated with Neutrons
中子辐照n型砷化镓退火特性的光致发光研究 - An automatic system for the measurement of two-dimensional distribution of resistivity of semi-insulating gallium arsenide wafer with three electrode guard method is presented in this paper. In actual application, the fluctuation of temperature and abnormal data obtained would influence the results of the measurement seriously.
本文介绍了三电极保护法半绝缘砷化镓材料电阻率二维分布自动测量系统，在实际应用中，温度波动、异常数据对测量结果产生严重影响，为此我们提出了一些措施。 - This paper discussed the propagation characterstics of surface acoustic wave, the screening of buried conductive layer and the reflection of metal matrix in gallium arsenide acoustic charge transport ( ACT) devices.
本文讨论了埋沟砷化镓声电输运器件中声表面波传播特性，金属栅阵列的散射特性和导电理层对表面波的屏蔽特性。 - Gallium oxide was prepared from gallium arsenide scraps through a series of steps such as leaching, purifying, neutralization, precipitation and calcination.
通过浸取、除杂、中和沉淀、煅烧等工艺对砷化镓废渣制备氧化镓进行了试验研究，并确定了较佳的工艺条件。 - The recombination-type semi-insulating gallium arsenide material of high resistivity is prepared by B2O3 liquid encapsulated Czochralski method ( LEC).
采用B2O3液封直拉法制备出高电阻率的复合型半绝缘砷化镓。 - Photoelectron spectroscopy for valence band of silver and gold films on gallium arsenide
砷化镓上银和金膜的价带光电子谱 - Yellow light-emitting diode of gallium arsenide phosphide
磷砷化镓黄色发光二极管 - Crystal Defects in Semi-Insulation Gallium Arsenide
半绝缘砷化镓单晶中的晶体缺陷 - The transient study on gallium arsenide photoconductive switches
砷化镓光电导开关瞬态特性研究 - Gallium Arsenide ( GaAs) is important compound semiconductor material. It has high electron transfer rate and direct transition energy band structure. GaAs is fit to be made into high frequency, high speed, endure heat, anti-radiation and luminescence apparatus.
砷化镓（GaAs）是一种重要的化合物半导体材料，具有电子迁移率高、直接跃迁型能带结构等优点，适合于制造高频、高速、耐高温、抗辐射和发光器件。 - X-ray measurement of the thermal expansion of germanium, silicon, indium antimonide and gallium arsenide
锗、硅、锑化铟和砷化镓的热膨涨&用X射线衍射法测量 - Average Conductivity of Complementary-Error and Gaussian Doped Layers in Gallium Arsenide
砷化镓中余误差和高斯掺杂层的平均电导 - Dislocations and micro-defects in semi-insulating gallium arsenide ( SI-GaAs) are investigated by means of chemical etching, scanning electron microscopy ( SEM), X-ray diffraction topography ( XRT), transmission electron microscopy ( TEM) and energy spectroscopy ( EDX).
通过化学腐蚀、金相显微观察、透射电子显微镜、扫描电镜和X射线异常透射形貌等技术，研究了半绝缘砷化镓单晶中的位错和微缺陷。 - With the development of semiconductor industry, semiconductor ceramic material such as single silicon, gallium arsenide and silicon carbide, etc, is extensive used in this field.
随着半导体工业的飞速发展，单晶硅、砷化镓和碳化硅等半导体陶瓷材料在此领域得到广泛应用。 - Gallium arsenide is one of the most important and most widely used semiconductor materials.
砷化镓是化合物半导体中最重要、用途最广泛的半导体材料之一。 - This thesis have done the experimental study of single electron charge and spin in very low temperature for the semiconductor gallium arsenide gate electronically controlled quantum dot devices in the international forefront of research areas.
本论文就是在此国际前沿研究领域中，针对半导体砷化镓栅极电控量子点器件进行了极低温下单电子电荷和自旋测量的实验研究。 - The mechanism of brittle-ductile transition influenced by temperature on the single crystal gallium arsenide chip by indentation experiments using vickers hardness tester were analyzed.
采用维氏硬度计对单晶砷化镓片进行压痕实验，分析了温度对单晶砷化镓片脆塑转变机理的影响。 - Single crystal gallium arsenide is a new semiconductor material has developed after germanium and silicon.
单晶砷化镓材料是继锗、单晶硅之后发展起来的新一代半导体材料。